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Si4310BDY
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
500
400
300
200
100
0
0
6
12
1 8
24
30
V KA - Re v erse V oltage ( V )
Capacitance
2
1
Duty Cycle = 0.5
0.2
0.1
N otes:
P DM
t 1
0.1
0.01
0.05
0.02
Single Pulse
t 1
t 2
1. D u ty Cycle, D =
t 2
2. Per Unit Base = R thJA = 100 °C/ W
3. T JM - T A = P DM Z thJA(t)
4. S u rface Mo u nted
10 -4
10 -3
10 -2
10 -1
1
1 0
100
6 0 0
S qu are W a v e P u lse D u ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
1 0
S qu are W a v e P u lse D u ration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73064 .
Document Number: 73064
S09-2436-Rev. B, 16-Nov-09
www.vishay.com
9
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